Monitoring and control of chemical composition of InGaN layers during MOCVD
Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial processes are used to deposit the GaN, InGaN, AlGaN and other wide band-gap semiconductor thin films making up the buffer, quantum well, and cap layers of the next generation high-brightness LEDs (HB-LEDs) for Solid State Lighting (SSL). Non-uniformity of the central wavelength over the [...]